Publications: Microelectronics: Properties of thin-film SiO2: 1989

Measurements of the thermal conductivity of micrometer-thick films of silicon dioxide are reported for the first time. Results show that the thermal conductivity is much lower than the values reported for bulk specimens, decreases with increasing temperature, and decreases with decreasing film thickness. This means that heating effects may be much larger than expected in accelerated stress tests and in other cases where joule heating can be a concern.
Schafft, H.A. ; National Institutes of Standards & Technology, Gaithersburg, MD, USA ; Suehle, J.S. ; Mirel, P.G.A. Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on Date of Conference: 13-14 March 1989